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PD - 9.1145A
IRGPC50MD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* Short circuit rated -10s @125C, V GE = 15V * Switching-loss rating includes all "tail" losses TM * HEXFRED soft ultrafast diodes * Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
C
Short Circuit Rated Fast CoPack IGBT
VCES = 600V VCE(sat) 2.0V
G
@VGE = 15V, IC = 35A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings
Parameter
VCES IC @ T C = 25C IC @ T C = 100C ICM ILM IF @ T C = 100C IFM tsc VGE PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
TO-247AC
Max.
600 60 35 120 120 25 120 10 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
s V W
C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
-- -- -- -- --
Typ.
-- -- 0.24 -- 6 (0.21)
Max.
0.64 0.83 -- 40 --
Units
C/W
g (oz)
Revision 2
C-399
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IRGPC50MD2
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A -- 0.62 -- V/C VGE = 0V, IC = 1.0mA -- 1.8 2.0 IC = 35A V GE = 15V -- 2.3 -- V IC = 60A See Fig. 2, 5 -- 2.0 -- IC = 35A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -14 -- mV/C VCE = VGE, IC = 250A 11 20 -- S VCE = 100V, I C = 35A -- -- 250 A VGE = 0V, V CE = 600V -- -- 6500 VGE = 0V, V CE = 600V, T J = 150C -- 1.3 1.7 V IC = 25A See Fig. 13 -- 1.2 1.5 IC = 25A, T J = 150C -- -- 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During t b Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 120 25 40 78 110 340 265 2.1 4.0 6.1 -- 80 110 610 440 9.4 13 2900 230 30 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 180 IC = 35A 38 nC VCC = 400V 60 See Fig. 8 -- TJ = 25C -- ns IC = 35A, V CC = 480V 510 VGE = 15V, R G = 5.0 400 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 11, 18 9.5 -- s VCC = 360V, T J = 125C VGE = 15V, R G = 5.0, VCPK < 500V -- TJ = 150C, See Fig. 9, 10, 11, 18 -- ns IC = 35A, V CC = 480V -- VGE = 15V, R G = 5.0 -- Energy losses include "tail" and -- mJ diode reverse recovery. -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 75 ns TJ = 25C See Fig. 160 TJ = 125C 14 I F = 25A 10 A TJ = 25C See Fig. 15 TJ = 125C 15 V R = 200V 375 nC TJ = 25C See Fig. 1200 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 Pulse width 5.0s, single shot.
VCC=80%(V CES), VGE=20V, L=10H, R G= 5.0, ( See fig. 19 ) Pulse width 80s; duty factor 0.1%.
C-400
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IRGPC50MD2
40
D u ty cycle: 5 0% TJ = 12 5 C T s in k = 90 C G at e drive a s sp e cif ie d
30
T urn -on lo sses in clud e e ff ects of reve rse reco ve ry Pow er Diss ipa tion = 40 W
20
10
0 0.1 1 10 100
f, F re quency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I RMS of fundamental)
1000
10 00
I C , Co llector-to-E m itter C urrent (A)
100
IC , C ollector-to-E m itte r C urrent (A )
2 5 C 1 50C
1 00
15 0C 2 5C
10
10
1 0.1 1
V GE = 15 V 2 0 s P U L S E W ID T H
10
1 5 10
V CC = 1 0 0V 5 s P U L S E W ID TH
15 20
V C E , C olle ctor-to-Em itter Voltage (V )
V G E , G a te-to-E m itter V o ltage (V )
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
C-401
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IRGPC50MD2
60
V GE = 1 5 V
3.5
V C E , Co llector-to-E m itter V oltag e (V)
M axim um D C C ollector C urrent (A )
V GE = 1 5V 8 0 s P U L S E W ID TH
50
I C = 7 0A
3.0
40
2.5
30
2.0
I C = 3 5A
20
10
1.5
IC = 17A
0 25 50 75 100 125 150
1.0 -60 -4 0 -20 0 20 40 60 80 100 120 140 160
T C , C ase Tem perature (C )
TC , C ase Tem pe rature (C )
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature
1
T herma l R espo nse (Z thJ C )
D = 0 .5 0
0.2 0
0.1
0.1 0 0 .05 S IN G LE PU L SE (TH ER MA L R ES PO N S E)
N o te s : 1 . D u ty f ac t or D = t 1 /t 2
PD M
t
1 t2
0.0 2 0.0 1
0.01 0.00001
2 . P e a k TJ = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
1
10
t 1 , R ectangular Pulse D uration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-402
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IRGPC50MD2
6 0 00 20
5 0 00
V G E , G ate-to-E m itter Voltag e (V)
V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc
V CE = 4 00 V I C = 3 5A
16
C , C a pa citan ce (pF )
Cies
4 0 00
Coes
3 0 00
12
8
2 0 00
Cres
1 0 00
4
0 1 10 100
0 0 30 60 90 1 20
V C E , C ollector-to-Em itter V oltage (V )
Q G , Total G ate C harge (nC )
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
6 .6
6 .5
T o tal S w itc hing Los se s (m J)
T otal S w itching Losses (m J)
VC C VG E TC IC
= 48 0V = 15V = 25 C = 3 5A
100
RG = 5 V G E = 15 V V C C = 4 80 V I C = 70 A
6 .4
6 .3
10
I C = 3 5A
6 .2
I C = 1 7A
6 .1
6 .0 0 10 20 30 40 50 60
1 -60 -40 -20 0 20 40 60 80
A
100 120 140 160
R G , G ate R esistance ( )
W
TC , C ase Tem perature (C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Case Temperature
C-403
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IRGPC50MD2
25
20
I , C ollector-to-E m itter C urrent (A )
Total Sw itching Losses (m J)
RG TC V CC VGE
=5 = 150 C = 4 80 V = 15 V
1000
V GEE 2 0V G= T J = 12 5C
100
15
S A F E O P E R A T IN G A R E A
10
10
5
0 0 20 40 60 80
A
C
1 1 10 100 1000
I C , C ollecto r-to-E m itter C urrent (A )
V C E , Co lle ctor-to-E m itter V olta ge (V )
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - I F (A)
TJ = 150C TJ = 125C
10
TJ = 25C
1 0.6
1.0
1.4
1.8
2.2
2.6
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-404
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IRGPC50MD2
140 100
120
VR = 200V TJ = 125C TJ = 25C
VR = 200V TJ = 125C TJ = 25C
100
I IRRM - (A)
I F = 50A I F = 25A
10
t rr - (ns)
80
IF = 50A I F = 25A
60
IF = 10A
I F = 10A
40
20 100
di f /dt - (A/s)
1000
1 100
1000
di f /dt - (A/s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif/dt
1500
10000
VR = 200V TJ = 125C TJ = 25C
1200
VR = 200V TJ = 125C TJ = 25C
900
I F = 50A
di(rec)M/dt - (A/s)
Q RR - (nC)
1000
IF = 10A
600
IF = 25A
I F = 25A
300
I F = 10A
0 100
IF = 50A
1000 100 100 1000
di f /dt - (A/s)
di f /dt - (A/s)
Fig. 16 - Typical Stored Charge vs. dif/dt C-405
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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IRGPC50MD2
90% Vge +Vge Same type device as D.U.T. Vce
80% of Vce
430F D.U.T.
Ic
10% Vce Ic
90% Ic 5% Ic
td(off)
tf
Eoff =
t1+5S Vce ic dt t1
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T. 10% +Vg +Vg
trr Ic
Qrr =
trr id dt tx
tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic
10% Irr Vcc
Vpk Irr
DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3
t4 Erec = Vd id dt t3
t1
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining E on, td(on), tr
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E rec, trr, Qrr, Irr
Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 3 - JEDEC Outline TO-247AC
C-406
Section D - page D-13
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